Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4RC10S
IRG4RC10S specification: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4RC10S
IRG4RC10S specification: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Tillverkare : IR
Packing : D-PAK
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 131 KB
Ansökan : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A