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IXBT16N170 specification: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 Liknande
- IXBT16N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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IXBT16N170 Datasheet och Spec
Tillverkare : IXYS
Packing : TO-268
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 54 KB
Ansökan : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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