Path:OKDatasheet > Semiconductor Datasheet > IXYS Datasheet > IXSH35N100A
IXSH35N100A specification: 1000V HiPerFET power MOSFET
IXSH35N100A Liknande
- IXSH15N120B
- 1200V HiPerFAST IGBT
- IXSH24N60
- 600V HiPerFAST IGBT
- IXSH24N60A
- 600V HiPerFAST IGBT
- IXSH24N60AU1
- 600V HiPerFAST IGBT with diode
- IXSH24N60B
- 600V high speed IGBT
- IXSH24N60U1
- 600V HiPerFAST IGBT with diode
- IXSH25N120A
- 1200V IGBT
- IXSH25N120AU1
- 1200V fast recovery epitaxial diode (FRED)
IXSH35N100A Datasheet och Spec
Tillverkare : IXYS
Packing : TO-247
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 87 KB
Ansökan : 1000V HiPerFET power MOSFET
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