Path:OKDatasheet > Semiconductor Datasheet > Infineon Datasheet > HYB314100BJ-60
HYB314100BJ-60 specification: 4M x 1bit DRAM
HYB314100BJ-60 Liknande
- HYB3116160BSJ-70
- 1M x 16bit EDO-DRAM
- HYB3116160BST-50
- 1M x 16bit EDO-DRAM
- HYB3116160BST-60
- 1M x 16bit EDO-DRAM
- HYB3116160BST-70
- 1M x 16bit EDO-DRAM
- HYB3116400BJ-50
- 4M x 4bit DRAM
- HYB3116400BJ-60
- 4M x 4bit DRAM
- HYB3116400BJ-70
- 4M x 4bit EDO-DRAM
- HYB3116400BT-50
- 4M x 4bit DRAM
HYB314100BJ-60 Datasheet och Spec
Tillverkare : Infineon
Packing : P-SOJ-26/20-5
Pins : 26
Temperature : Min 0 °C | Max 70 °C
Storlek : 1126 KB
Ansökan : 4M x 1bit DRAM
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