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IW4023BN specification: Triple 3-input NAND gate, high-voltage silicon-gate CMOS
IW4023BN Liknande
- IW4001BD
- Quad 2-input NOR gate, high-voltage silicon-gate CMOS
- IW4001BN
- Quad 2-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BD
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BN
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BN
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4015BN
- Dual 4-stage static shift register, high-voltage silicon-gate CMOS
- IW4017BD
- Counter/driver, high-voltage silicon-gate CMOS
- IW4017BN
- Counter/driver, high-voltage silicon-gate CMOS
IW4023BN Datasheet och Spec
Tillverkare : Integral
Packing : Plastic DIP
Pins : 14
Temperature : Min -55 °C | Max 125 °C
Storlek : 118 KB
Ansökan : Triple 3-input NAND gate, high-voltage silicon-gate CMOS
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