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FSYC9160D specification: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D Liknande
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC9160D Datasheet och Spec
Tillverkare : Intersil
Packing :
Pins : 0
Temperature : Min 0 °C | Max 0 °C
Storlek : 67 KB
Ansökan : Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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