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LS5912 specification: Wideband high gain monolithic dual N-channel JFET
LS5912 Liknande
- LS5906
- Low leakage low drift monolithic dual N-channel JFET
- LS5907
- Low leakage low drift monolithic dual N-channel JFET
- LS5908
- Low leakage low drift monolithic dual N-channel JFET
- LS5909
- Low leakage low drift monolithic dual N-channel JFET
- LS5911
- Wideband high gain monolithic dual N-channel JFET
- LS5912
- Wideband high gain monolithic dual N-channel JFET
- LS5912C
- Wideband high gain monolithic dual N-channel JFET
LS5912 Datasheet och Spec
Tillverkare : Linear Systems
Packing : TO-71
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Storlek : 29 KB
Ansökan : Wideband high gain monolithic dual N-channel JFET
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