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The Latest MDE Semiconductor Datablad PDF
| Del nr | Ansökan |
|---|---|
| MDE-25D221K | 220V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| P6KE11A | 9.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA85A | 85.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-10D181K | 180V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| SMDJ40A | 40.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE30A | 25.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE18A | 14.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ28A | 28.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ90A | 90.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3KP7.0A | 7.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE200 | 162.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMLJ40 | 40.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ6.5A | 6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE350A | 300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-10D241K | 240V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| 15KP240 | 240V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 30KW36A | 36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 3KP6.5 | 6.50V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-110.0C | 110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE33A | 28.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE160A | 136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE91A | 77.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE20 | 15.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 5KP58A | 58.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-40D301K | 300V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| MAX40-9.0CA | 9.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP180 | 180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP75 | 75.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor profil
MDE Semiconductor, Inc. is an innovative, quality oriented device manufacturer with a Single Minded Focus on Circuit Protection Products. Our Transient Voltage Suppression (TVS) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lighting, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 648,000 watts.