Path:OKDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > 30KW30
30KW30 specification: 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW30 Liknande
- 30KW102
- 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW108
- 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW108A
- 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW120
- 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW132
- 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW132A
- 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW144
- 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 30KW144A
- 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW30 Datasheet och Spec
Tillverkare : MDE Semiconductor
Packing : P-600
Pins : 2
Temperature : Min -55 °C | Max 175 °C
Storlek : 182 KB
Ansökan : 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW30 PDF Ladda ner