Path:OKDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > P4KE400
P4KE400 specification: 324.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE400 Liknande
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- 60.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE440
- 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12A
- 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE180
- 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE220
- 175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE200
- 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE39
- 31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12
- 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE400 Datasheet och Spec
Tillverkare : MDE Semiconductor
Packing :
Pins : 2
Temperature : Min -55 °C | Max 175 °C
Storlek : 928 KB
Ansökan : 324.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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