Path:OKDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > P4KE6.8
P4KE6.8 specification: 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE6.8 Liknande
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- 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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- 175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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- 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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P4KE6.8 Datasheet och Spec
Tillverkare : MDE Semiconductor
Packing :
Pins : 2
Temperature : Min -55 °C | Max 175 °C
Storlek : 928 KB
Ansökan : 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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