Path:OKDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > P4KE8.2
P4KE8.2 specification: 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE8.2 Liknande
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P4KE8.2 Datasheet och Spec
Tillverkare : MDE Semiconductor
Packing :
Pins : 2
Temperature : Min -55 °C | Max 175 °C
Storlek : 928 KB
Ansökan : 6.63V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
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