Path:OKDatasheet > Semiconductor Datasheet > Magnatec Datasheet > BUL52B
BUL52B specification: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B Liknande
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B Datasheet och Spec
Tillverkare : Magnatec
Packing : TO220
Pins : 3
Temperature : Min 0 °C | Max 150 °C
Storlek : 20 KB
Ansökan : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B PDF Ladda ner