BUZ900X4S specification: N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Liknande

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- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Datasheet och Spec

Tillverkare : Magnatec

Packing : SOT227

Pins : 4

Temperature : Min 0 °C | Max 150 °C

Storlek : 36 KB

Ansökan : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.