Path:OKDatasheet > Semiconductor Datasheet > Micro Electronics Datasheet > BC261
BC261 specification: 360mW PNP high gain low noise silicon planar epitaxial transistor
Path:OKDatasheet > Semiconductor Datasheet > Micro Electronics Datasheet > BC261
BC261 specification: 360mW PNP high gain low noise silicon planar epitaxial transistor
Tillverkare : Micro Electronics
Packing : TO-18
Pins : 3
Temperature : Min -65 °C | Max 200 °C
Storlek : 103 KB
Ansökan : 360mW PNP high gain low noise silicon planar epitaxial transistor