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BD241 specification: 4mW NPN silicon epitaxial base power transistor
BD241 Liknande
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241 Datasheet och Spec
Tillverkare : Micro Electronics
Packing : TO-220B
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 106 KB
Ansökan : 4mW NPN silicon epitaxial base power transistor
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