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MGFC5110 specification: Ka-band 3-stage self bias noise amplifier
MGFC5110 Liknande
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC1403
- GaA fet for microwave low-noise amplifiers
- MGFC36V3436
- 3.4-3.6GHz band 4W internally matched GaAs FET
- MGFC36V5258
- 5.2-5.8GHz band 4W internally matched GaAs FET
- MGFC36V59964A
- 5.9-6.4GHz band 4W internally matched GaAs FET
- MGFC36V6472A
- 6.4-7.2 GHz band 4W internally matched GaAs FET
- MGFC36V7177A
- 7.1-7.7 GHz band 4W internally matched GaAs FET
- MGFC36V7785A
- 7.7-8.5GHz band 4W internally matched GaAs fet
MGFC5110 Datasheet och Spec
Tillverkare : Mitsubishi
Packing :
Pins : 8
Temperature : Min 0 °C | Max 0 °C
Storlek : 38 KB
Ansökan : Ka-band 3-stage self bias noise amplifier
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