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MTB23P06V specification: TMOS V power field effect transistor
MTB23P06V Liknande
- MTB20N20E
- TMOS E-FET high energy power FET
- MTB23P06E
- TMOS E-FET high energy power FET
- MTB23P06V
- TMOS V power field effect transistor
- MTB29N15E
- TMOS E-FET power field effect transistor
- MTB2N40E
- TMOS E-FET high energy power FET
- MTB2N60E
- TMOS E-FET high energy power FET
- MTB2P50E
- TMOS E-FET high energy power FET
MTB23P06V Datasheet och Spec
Tillverkare : Motorola
Packing : DPAK
Pins : 4
Temperature : Min -55 °C | Max 175 °C
Storlek : 273 KB
Ansökan : TMOS V power field effect transistor
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