Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTB50N06VL
MTB50N06VL specification: TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL Liknande
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB50N06VL Datasheet och Spec
Tillverkare : Motorola
Packing : DPAK
Pins : 4
Temperature : Min -55 °C | Max 175 °C
Storlek : 273 KB
Ansökan : TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL PDF Ladda ner