Path:OKDatasheet > Semiconductor Datasheet > NEC Datasheet > UPA1717G-E1
UPA1717G-E1 specification: P-channel enhancement type power MOS FET
UPA1717G-E1 Liknande
- UPA101G
- Ultra-high-frequency NPN transistor array
- UPA101G-E1
- Ultra-high-frequency NPN transistor array
- UPA102B
- Ultra-high-frequency NPN transistor array
- UPA102B-E1
- Ultra-high-frequency NPN transistor array
- UPA102G
- Ultra-high-frequency NPN transistor array
- UPA102G-E1
- Ultra-high-frequency NPN transistor array
- UPA102P
- Ultra-high-frequency NPN transistor array
- UPA103B
- Ultra-high-frequency NPN transistor array
UPA1717G-E1 Datasheet och Spec
Tillverkare : NEC
Packing : 8-P-SOP
Pins : 0
Temperature : Min 0 °C | Max 0 °C
Storlek : 71 KB
Ansökan : P-channel enhancement type power MOS FET
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