Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE2319
NTE2319 specification: Silicon NPN transistor. High voltage, high speed power switch.
NTE2319 Liknande
- NTE2003
- Integrated circuit. Dolby B-type noise reduction processor.
- NTE2011
- Integrated circuit. 7-channel darlington array/driver.
- NTE2012
- Integrated circuit. 7-channel darlington array/driver.
- NTE2013
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2014
- Integrated circuit. 7-channel darlington array/driver.
- NTE2015
- Integrated circuit. 7-channel darlington array/driver.
- NTE2016
- Integrated circuit. 8-channel darlington array/driver.
NTE2319 Datasheet och Spec
Tillverkare : NTE Electronic
Packing : TO3
Pins : 2
Temperature : Min -65 °C | Max 200 °C
Storlek : 28 KB
Ansökan : Silicon NPN transistor. High voltage, high speed power switch.
NTE2319 PDF Ladda ner