Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE3311
NTE3311 specification: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE3311
NTE3311 specification: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Tillverkare : NTE Electronic
Packing :
Pins : 3
Temperature : Min 0 °C | Max 150 °C
Storlek : 19 KB
Ansökan : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.