NTE3312 specification: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

NTE3312 Liknande

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NTE3008
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NTE3009
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NTE3312 Datasheet och Spec

Packing :

Pins : 3

Temperature : Min 0 °C | Max 150 °C

Storlek : 19 KB

Ansökan : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.