Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE4969
NTE4969 specification: Surge clamping, transient overvoltage suppressor, bidirectional. VR = 94.00V max reverse stand off voltage.
NTE4969 Liknande
- NTE451
- Silicon N-cannel JFET transistor. VNF/UNF amplifier.
- NTE452
- "Silicon N-cannel JFET transistor. VNF amplifier, mixer."
- NTE454
- MOSFET, N-Ch, dual gate, TV UNF/RF amp, gate protected.
- NTE457
- Silicon N-channel JFET transistor general purpose amplifier, switch.
- NTE458
- N-channel silicon JFET general purpose, low noise, audio frequency amplifier.
- NTE459
- N-channel silicon JFET transistor AF amplifier/chopper/switch.
- NTE46
- Silicon NPN transistor. Darlington, general purpose amplifier, preamp, driver.
- NTE464
- Silicon complementary MOSFET P-ch transistor. Enhancement mode for switching applications.
NTE4969 Datasheet och Spec
Tillverkare : NTE Electronic
Packing :
Pins : 2
Temperature : Min -65 °C | Max 175 °C
Storlek : 28 KB
Ansökan : Surge clamping, transient overvoltage suppressor, bidirectional. VR = 94.00V max reverse stand off voltage.
NTE4969 PDF Ladda ner