Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE5655
NTE5655 specification: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE5655
NTE5655 specification: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Tillverkare : NTE Electronic
Packing : TO92
Pins : 3
Temperature : Min -40 °C | Max 100 °C
Storlek : 20 KB
Ansökan : TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.