Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE5899
NTE5899 specification: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.
Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE5899
NTE5899 specification: Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.
Tillverkare : NTE Electronic
Packing : DO4
Pins : 2
Temperature : Min -65 °C | Max 175 °C
Storlek : 26 KB
Ansökan : Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.