MGP4N60ED specification: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Liknande

MGP4N60E
- Insulated Gate Bipolar Transistor N-Channel
MGP4N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Datasheet och Spec

Packing : TO-220

Pins : 3

Temperature : Min 0 °C | Max 0 °C

Storlek : 160 KB

Ansökan : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel