Path:OKDatasheet > Semiconductor Datasheet > ON Semiconductor Datasheet > MGW21N60ED
MGW21N60ED specification: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED Liknande
- MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
- MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED Datasheet och Spec
Tillverkare : ON Semiconductor
Packing : TO-247
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Storlek : 167 KB
Ansökan : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW21N60ED PDF Ladda ner