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MGY25N120D specification: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Liknande
- MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Datasheet och Spec
Tillverkare : ON Semiconductor
Packing : TO-3PBL
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Storlek : 188 KB
Ansökan : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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