VTP8551 specification: Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.

VTP8551 Liknande

VTP8350
- Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8440
- "Process photodiode. Isc = 55 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K."
VTP8551
- Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.
VTP8651
- Process photodiode. Isc = 55 microA(typ), Voc = 300 mV at H = 100 fc, 2850 K.

VTP8551 Datasheet och Spec

Tillverkare : PerkinElmer

Packing : Mini DIP

Pins : 2

Temperature : Min -40 °C | Max 85 °C

Storlek : 28 KB

Ansökan : Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K.