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PHB10N40E specification: 400 V, power MOS transistor avalanche energy rated
PHB10N40E Liknande
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB10N40E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 98 KB
Ansökan : 400 V, power MOS transistor avalanche energy rated
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