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PHB6N50E specification: 500 V, power MOS transistor avalanche energy rated
PHB6N50E Liknande
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- PHB65N06LT
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- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- Trench transistor Logic level FET
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
PHB6N50E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 84 KB
Ansökan : 500 V, power MOS transistor avalanche energy rated
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