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PHB6ND50E specification: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB6ND50E Liknande
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- TrenchMOS transistor. Logic level FET.
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PHB6ND50E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 70 KB
Ansökan : 500 V, power MOS transistor FREDFET, avalanche energy rated
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