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PHD2N60E specification: PowerMOS transistor. Avalanche energy rated.
PHD2N60E Liknande
- PHD20N06T
- 55 V, N-channel trenchMOS transistor
- PHD21N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHD21N06LT
- TrenchMOS transistor. Logic level FET.
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD24N03LT
- TrenchMOS(TM) transistor Logic level FET
- PHD27NQ10T
- N-channel TrenchMOS transistor
PHD2N60E Datasheet och Spec
Tillverkare : Philips
Packing : SOT428
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 103 KB
Ansökan : PowerMOS transistor. Avalanche energy rated.
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