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PHD6N10E specification: 100 V, power MOS transistor
PHD6N10E Liknande
- PHD66NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD69N03LT
- TrenchMOS transistor. Logic level FET.
- PHD69N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD69N03LT
- 25 V, N-channel trenchMOS transistor logic level FET
- PHD6N10E
- 100 V, power MOS transistor
- PHD6N10E
- PowerMOS transistor
PHD6N10E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 62 KB
Ansökan : 100 V, power MOS transistor
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