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PHX3N40E specification: 400 V, power MOS transistor avalanche energy rated
PHX3N40E Liknande
- PHX3055E
- 55 V, N-channel trenchMOS transistor
- PHX3055L
- 60 V, power MOS transistor logic level FET
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
PHX3N40E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 70 KB
Ansökan : 400 V, power MOS transistor avalanche energy rated
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