F1001C specification: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Liknande

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 36 KB

Ansökan : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor