F1027 specification: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Liknande

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 43 KB

Ansökan : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor