F1034 specification: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Liknande

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 34 KB

Ansökan : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor