F1063 specification: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1063 Liknande

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1063 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 35 KB

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