F1081 specification: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Liknande

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 43 KB

Ansökan : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor