F1116 specification: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Liknande

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 46 KB

Ansökan : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor