F1209 specification: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Liknande

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Storlek : 39 KB

Ansökan : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor