F1214 Liknande

  • F1210
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1214
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Datasheet och Spec

Tillverkare : Polyfet RF 

Packing :  

Pins : 6 

Temperature : Min -65 °C | Max 150 °C

Storlek : 38 KB

Ansökan : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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