F1240 specification: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Liknande

F1240
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 45 KB

Ansökan : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor