F1260 specification: "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 Liknande

F1260
- "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 41 KB

Ansökan : "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"