F1280 specification: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Liknande

F1280
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 42 KB

Ansökan : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor