F1410 specification: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Liknande

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 39 KB

Ansökan : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor