F1516 Liknande

  • F1510
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1516
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1516 Datasheet och Spec

Tillverkare : Polyfet RF 

Packing :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Storlek : 40 KB

Ansökan : 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1516 PDF Ladda ner