F2013 specification: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2013 Liknande

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2013 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 41 KB

Ansökan : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor